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 Light Emitting Diode(InGaN)
KLC-50 G
DIMENSIONS KLC-50 G is a high bright InGaN Green LED, and has the optimized optical characteristics.
Unit : [mm]
Features
* Transparent epoxy lens * High Optical Output
1
2
Applications
* Display * Indicator * Signage
2
1
Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature
*2. Soldering time 5 Sec Keep the distance more than 3mm from soldering foundation.
*2 *1
[ Ta=25C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 30 0.5 105 -30 ~ +85 -40 ~ +100 260
Unit V mA A mW C C C
Operating temperature
*1. IFP Measured under duty 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle
[ Ta=25C ]
Symbol VF IR Iv d 21/2
Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA
Min 230 520 -
Typ 3.2 380 25 180
Max 3.5 10 530 530 -
Unit V uA mcd nm nm deg.
1/2
Light Emitting Diode(InGaN)
KLC-50 G
Forward current vs. Ambient temperature
50 40 30 20 10 0
Relative intensity
Radiant Intensity vs. Forward current
1.5
Forward current IF[mA]
1
0.5
0
20
40
60
80
100
0
0
5
10
15
20
25
30
(IF) 35
Ambient temperature Ta []
Forward current IF[mA]
Relative radiant intensity vs. Ambient temperature
Relative radiant intensity PO
Relative intensity vs. Wavelength
1.2 1
10
Intensity [arb.]
0 20 40 60 80 100
Ambient temperature Ta []
0.8 0.6 0.4 0.2
1
0.1
-20
0 400 450 500 550 600 650 Wave Length[nm]
Forward current vs. Forward voltage
40 35 30 25 20 15 10 5 0 0
Radiant Pattern
Angle(deg)
Forward current IF[mA]
+4
+ 60
0
+20
0
-20
-4
0
-6 0
50
-80 -100
+80
+100
0
100
50
50
1.0 2.0 2.5 3.0 3.5 4.0
Forward voltage VF[V]
100
Relative intensity(%)
2/2


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